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| BYS13-90 Vishay Semiconductors ESD Safe - High Voltage Power Schottky - Rectifier Features D D D D D D High efficiency Low forward voltage drop Negligible switching losses Low reverse current High reverse surge capability High ESD capability 15 811 Applications High frequency SMPS Free wheeling diode in low voltage converters Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Repeptive peak reverse voltage Continuous reverse voltage Average forward current Tj=76C, VR = 90V Non-repeptive surge forward current tp=10ms, half sinewave ESD - IEC 1000-4-2 R = 330W, C = 150pF Junction and storage temperature range Type Symbol VRRM VR IFAV IFSM ESD Tj=Tstg Value 90 90 1.5 75 20 -55...+150 Unit V V A A kV C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Junction lead TL=constant Junction ambient Epoxy-glass hard tissue (see figure 1) 35mm * 17mm2 copper area per electrode Epoxy-glass hard tissue (see figure 2) 35mm * 50mm2 copper area per electrode Symbol RthJL RthJA Value 25 150 125 Unit K/W K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Junction Capacitance Test Conditions IF=100mA IF=3A IF=3A Tj = 100C VR=VRRM VR=VRRM, Tj=100C VR=4V, f = 1MHz Type Symbol VF IR CD 130 Min Typ 850 700 Max 430 950 850 30 5 Unit mV mA mA pF Document Number 86065 Rev. 4, 25-Sep-00 www.vishay.com 1 (4) BYS13-90 Vishay Semiconductors Characteristics (Tj = 25_C unless otherwise specified) 100.000 10.000 Tj = 150C 1.000 Tj = 25C 0.100 0.010 0.001 0 16480 100000 VR = VRRM I R - Reverse Current ( mA ) - Forward Current ( A) 10000 1000 I F 100 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) 16483 25 50 75 100 125 150 Tj - Junction Temperature ( C ) Figure 1. Forward Current vs. Forward Voltage 1.6 I FAV- Average Forward Current ( A ) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 16481 Figure 4. Reverse Current vs. Junction Temperature 2000 VR = VR RM half sinewave RthJA PR - Reverse Power Dissipation ( mW ) VR = VRRM 1500 PR-Limit @100%VR v25K/W 1000 PR-Limit @80%VR 500 0 30 60 90 120 150 16484 25 50 75 100 125 150 Tamb - Ambient Temperature ( C ) Tj - Junction Temperature ( C ) Figure 2. Max. Average Forward Current vs. Ambient Temperature 1.6 I FAV- Average Forward Current ( A ) CD - Diode Capacitance ( pF ) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 16482 Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature 400 350 300 250 200 150 100 50 0 0.1 16485 f=1MHz RthJA v25K/W VR = VR RM half sinewave 20 40 60 80 100 120 140 160 1.0 10.0 100.0 Tamb - Ambient Temperature ( C ) VR - Reverse Voltage ( V ) Figure 3. Max. Average Forward Current vs. Ambient Temperature Figure 6. Diode Capacitance vs. Reverse Voltage www.vishay.com 2 (4) Document Number 86065 Rev. 4, 25-Sep-00 BYS13-90 Vishay Semiconductors Dimensions in mm 14275 Document Number 86065 Rev. 4, 25-Sep-00 www.vishay.com 3 (4) BYS13-90 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.com 4 (4) Document Number 86065 Rev. 4, 25-Sep-00 |
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